Effect of surface stoichiometry on Be doping in GaAs by intermittent supply of AsH3 and TEG in an ultra-high vacuum |
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| Authors: | Takeo Ohno Yutaka Oyama Ken Suto Jun-ichi Nishizawa |
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| Institution: | a Department of Materials Science and Engineering, Graduate School of Engineering, Tohoku University, Aramaki Aza Aoba 02, Sendai 980-8579, Japan;b Semiconductor Research Institute of Semiconductor Research Foundation, Kawauchi Aoba, Sendai 980-0862, Japan |
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| Abstract: | The effects of surface stoichiometry on Be doping in GaAs grown by molecular layer epitaxy have experimentally been investigated. Be-doped p+-GaAs layers were grown on (0 0 1)-oriented GaAs substrates by intermittent supply of AsH3 and triethylgallium (TEG) in an ultra-high vacuum. Be(MeCp)2 was used as a p-type dopant gas. The surface stoichiometry before introducing the dopant gas was controlled by changing the AsH3 and TEG injection sequence and supply time. The doping characteristics were evaluated by secondary ion mass spectroscopy analysis. It was found that doping characteristics of Be-doped GaAs are strongly dependent on the doping sequence and surface stoichiometry. This experimental result and the Be doping mechanism are discussed on the basis of rate law of the surface chemical reaction. |
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| Keywords: | Author Keywords: Be-doping GaAs Molecular layer epitaxy Surface reaction Surface stoichiometry |
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