Photocapacitance study of deep centers in ZnSe-based radiating structures

The photocapacitance method is used to study ZnSe-Au and ZnSe-ZnO(SiO₂) barrier structures in order to investigate deep centers in ZnSe crystals annealed in liquid zinc and subjected to additional thermoprocessing in a vacuum. The energy levels of the deep centers producing photocapacitance are determined. In crystals annealed for 4.5 h acceptor levels with ionization energies of 0.28, 0.36, 0.58, and 0.71 eV are found. With increase in anealing period to 100 h only the level with ionization energy of 0.58 eV appears, leading to a decrease in intensity of the yellow-green band and an increase in intensity of blue scintillation in the electroluminescence spectra.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 59–63, July 1984.