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超声搅拌化学浴沉积法制备大颗粒和致密的CdS薄膜
引用本文:史成武,陈柱,史高杨,孙人杰.超声搅拌化学浴沉积法制备大颗粒和致密的CdS薄膜[J].物理化学学报,2011,27(12):2821-2825.
作者姓名:史成武  陈柱  史高杨  孙人杰
作者单位:1. School of Chemical Engineering, Hefei University of Technology, Hefei 230009, P. R. China; 2. Key Laboratory of Novel Thin FilmSolar Cells, Chinese Academy of Sciences, Hefei 230031, P. R. China
基金项目:国家自然科学基金,973 计划重大科学问题导向项目,安徽省年度重点科研计划项目,安徽省高校自然科学基金,合肥工业大学学生创新基金
摘    要:采用超声搅拌化学浴法(UCBD)在SnO2:F透明导电玻璃衬底上制备了CdS薄膜.研究了退火和CdCl2处理对UCBD-CdS薄膜的表面形貌、晶体结构和直接带隙的影响,比较了沉积时间对UCBD-CdS薄膜中CdS聚集体颗粒大小和堆积致密性的影响.结果表明,CdCl2处理可使CdS聚集体中的小颗粒重新熔合在一起,但CdS聚集体的大小并没有改变.在UCBD-CdS薄膜的沉积过程中,CdS薄膜的横向和纵向生长速率之比会随着沉积时间的不同而改变,且沉积时间是获得大颗粒的CdS聚集体和致密的UCBD-CdS薄膜的重要影响因素.当沉积时间为40min时,获得的UCBD-CdS薄膜较致密,CdS聚集体的大小为180nm,膜厚为80.8nm,适合作为薄膜太阳电池的窗口层.

关 键 词:CdS薄膜  超声搅拌  化学浴沉积  沉积时间  退火  CdCl2处理  
收稿时间:2011-07-14
修稿时间:2011-09-29

Preparation of Large Grain and Dense CdS Thin Films Using Ultrasonic Agitation Chemical Bath Deposition
SHI Cheng-Wu,CHEN Zhu,SHI Gao-Yang,SUN Ren-Jie.Preparation of Large Grain and Dense CdS Thin Films Using Ultrasonic Agitation Chemical Bath Deposition[J].Acta Physico-Chimica Sinica,2011,27(12):2821-2825.
Authors:SHI Cheng-Wu  CHEN Zhu  SHI Gao-Yang  SUN Ren-Jie
Institution:1. School of Chemical Engineering, Hefei University of Technology, Hefei 230009, P. R. China; 2. Key Laboratory of Novel Thin FilmSolar Cells, Chinese Academy of Sciences, Hefei 230031, P. R. China
Abstract:We deposited CdS thin films onto F-doped SnO2 transparent conductive glass by ultrasonicagitation chemical bath deposition (UCBD). The influence of the annealing and CdCl2-treatment on thesurface morphology, crystal structure, and direct band gap of the UCBD-CdS thin films was investigated.The effect of deposition time on the grain size of the CdS aggregates and the stack denseness of theUCBD-CdS thin films was compared. The results reveal that the small grains in the CdS aggregates weremelted together and the CdS aggregate size did not change in the UCBD-CdS thin films after theCdCl2-treatment procedure. It is interesting that the ratio of the horizontal to vertical deposition rate variedwith deposition time over the deposition period of the UCBD-CdS thin films. The deposition time was veryimportant to obtain large CdS aggregate grains and dense UCBD-CdS thin films. Over a deposition time of40 min the resulting UCBD-CdS thin films were dense and had a 180 nm grain size of CdS aggregates anda 80.8 nm of thin film thickness. The large-grained and dense UCBD-CdS thin films were suitable for thinfilm solar cells as a window layer.
Keywords:CdS thin film  Ultrasonic agitation  Chemical bath deposition  Deposition time  Annealing  CdCl2-treatment
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