“三径”闭锁窗口模型的实验研究

 在解释CMOS器件辐射感应的闭锁窗口现象时，提出了所谓的“三径”闭锁窗口模型。在分析CMOS器件闭锁电路模型的基础上，简要介绍了“三径”闭锁窗口模型的有关情况。为了实验验证该模型，设计了实验电路以模拟CMOS器件的寄生闭锁路径，给出了相应的参数。“强光I”瞬时伽马辐照实验显示，实验电路像预计的那样出现了闭锁窗口。这说明，用“三径”模型解释某些闭锁窗口现象是合理的。

Experiment study of three-path latch-up window model

When trying to explain the latch-up window phenomena in CMOS devices induced by radiation, the so called “three-path” latch-up window model is provided. The “three-path” latch-up window model is simply based on the analysis of CMOS device latch-up circuit model. To verify the model, a test circuit has been designed to simulate parasitical latch-up paths in CMOS devices and relevant parameters are reported. Transient gamma irradiation experiment on “Qiangguang I” indicates that a latch-up window appears in the test circuit as predicated. The result validates that it is reasonable to explain some latch-up window phenomena according to the “three-path” latch-up window model.