Heavy doping for improved short-channel operation of GaAs MESFET |
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| Authors: | Mohammad S Patil MB Morkoc H |
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| Institution: | Coordinated Sci. Lab., Illinois Univ., Urbana, IL, USA; |
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| Abstract: | A theoretical calculation is performed to investigate the I/V characteristics of GaAs MESFETs. The calculation is based on a simple model that takes into account the dependence of electron mobility on electric field and doping. It is shown that velocity overshoot may be treated by an effective velocity higher than the bulk value.<> |
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