衬底材料对制备立方氮化硼薄膜的影响

较系统地研究了不同衬底材料对制备氮化硼薄膜的影响。用热丝增强射频等离子体CVD法，以NH3，B2H6和H2为反应气体，在Si,Ni,Co和不锈钢等衬底材料上，成功生长出高质量的立方氮化硼薄膜，还用13.56MHz的射频溅射系统将c-BN薄膜沉积在Si衬底上，靶材为h-BN(纯度为99.99％），溅射气体为氩气和氮气的混合气体，所得到的氮化硼薄膜中立方相含量高于90%，用X射线衍射谱和傅里叶变换红谱对样品进行了分析表明，衬底材料与c-BN的晶格匹配情况，对于CVD生长立方氮化硼薄膜影响很大，而对溅射生长立方氮化硼薄膜影响不大。

INFLUENCE OF SUBSTRATES ONTHE FORMATION OF c-BN THIN FILMS

The influence of substrates on the formation of cubic boron nitride(c-BN) thin films was reported.The c-BN thin films were deposited on different substrates with hot-filament-assisted plasma CVD and RF sputter.In the CVD method,NH3,B2H6 and H2 were reacting gases,and Si,Ni,Co,stainless steel and other materials were substrates.The experiments showed that the cubic phase content in c-BN thin films was affected by substrates.The film on Ni substrate was the best among all the substrates in the CVD method,and its cubic phase content reached over 80%.Our study also found that in the CVD method a Ni interlayer on the Si substrate can improve the quality of the c-BN thin films than directly on Si substrate.In the sputter method,the working gas was N2 and Ar,hot-pressed hexagonal boron nitride(h-BN) of 4N purity was used as sputtering target,the c-BN thin film with over 90% content of cubic phase was successively deposited on Si substrate.In our research,the boron nitride thin films were characterized by Fourier Transform Infrared(FTIR) Spectra and X-ray diffraction. Finally we concluded that for CVD method the cubic phase content and adhesion are highly affected by the crystal lattice mismatch between c-BN and substrate materials;however,for sputter method the crystal lattice mismatch between c-BN and substrate materials little affects the quality of c-BN thin films.