Band gap states of V and Cr in 6H-silicon carbide |
| |
| Authors: | N Achtziger J Grillenberger W Witthuhn |
| |
| Institution: | Friedrich-Schiller-Universit?t Jena, Institut für Festk?rperphysik, Max-Wien-Platz 1, D-07743 Jena, Germany (Fax: +493641/635854, E-mail: achtziger@pinet.uni-jena.de), DE
|
| |
| Abstract: | Ti, V and Cr in n-type 6H-SiC were investigated by radiotracer deep level transient spectroscopy (DLTS). Doping with the radioactive
isotopes 48V and 51Cr was done by recoil implantation followed by annealing (1600 K). Repeated DLTS measurements during the elemental transmutation
of these isotopes to 48Ti and 51V respectively revealed the corresponding concentration changes of band gap states. Thus, three levels were identified in
the band gap: a Cr level at 0.54 eV and two V levels at 0.71 and 0.75 eV below the conduction band edge. There are no deep levels of Ti in the upper part of the band gap.
Received: 28 April 1997/Accepted: 16 May 1997 |
| |
| Keywords: | PACS: 71 55 Ht 72 20 Jv 23 90 +w |
| 本文献已被 SpringerLink 等数据库收录！ |
