Temperature and frequency dependence of the ferroelectric characteristics of BaTiO3 thin films for nonvolatile memory applications |
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| Authors: | Kai-Huang Chen Ying-Chung Chen Zhi-Sheng Chen Cheng-Fu Yang Ting-Chang Chang |
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| Affiliation: | (1) Department of Electrical Engineering, National Sun Yat-sen University, Kaohsiung, 804, Taiwan, R.O.C.;(2) Department of Chemical and Materials Engineering, Kaohsiung University, Kaohsiung, 811, Taiwan, R.O.C.;(3) Department of Physics, National Sun Yat-sen University, Kaohsiung, 804, Taiwan, R.O.C. |
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| Abstract: | Ferroelectric thin films of BaTiO3 were successfully deposited on SiO2/Si substrate under the optimal rf magnetron sputtering conditions, and their electrical and ferroelectric characteristics were discussed. The memory window, capacitance, threshold voltage and leakage current density of MFIS structure under different frequencies and temperatures were also reported. The variations of ferroelectric capacitance and threshold voltage would be attributed to the as-deposited BaTiO3 films of MFIS structure as the temperature and frequency increased. Besides, the memory window, threshold voltage and leakage current density would be degraded from 4 V, 5 V and 8×10-10 A/cm2 to 2.5 V, 10 V and 5×10-4 A/cm2, respectively, as the temperature increased from 25 to 90 °C. PACS 77.84.-s; 81.15.Cd; 73.40.Qv; 51.50.+v; 67.80.Gb |
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