Specific heat of the semiconducting layered compound SnSe2 at low temperatures |
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| Authors: | R. Lagnier C. Ayache J.-Y. Harbec S. Jandl J.-P. Jay-Gerin |
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| Affiliation: | Centre d''Etudes Nucléaires de Grenoble, Service des Basses Températures, Laboratoire de Cryophysique, 85X, 38041 Grenoble Cédex, France;Groupe de Recherche sur les Semiconducteurs et les Diélectriques, Département de Physique, Faculté des Sciences, Université de Sherbrooke, Sherbrooke, Québec, Canada J1K 2R1;Groupe C.R.M. en Sciences des Radiations, Département de Médecine Nucléaire et de Radiobiologie, Faculté de Médecine, Université de Sherbrooke, Sherbrooke, Québec, Canada J1H 5N4 |
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| Abstract: | The specific heat of the layer compound semiconductor tin diselenide SnSe2 has been measured in the temperature range from 2.7 to 280 K. In this range, the overall temperature dependence of the specific heat is dominated by the lattice contribution, which yields a limiting Debye characteristic temperature at absolute zero θD (0) = 140 ± 2K. The increase in the specific heat at low temperatures is more gradual than what would be expected for a simple Debye solid, and reflects the quasi-two dimensional layer structure of this compound. |
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