Subband structure and kinetic characteristics of thin films of gapless semiconductors

The subband structure and effective masses values in quantum-sized film of gapless semiconductors are calculated. Isoenergy surfaces corrugation is taken into account. The results are shown to differ strongly from those got in spherical approximation. The complex subband structure results in a number of peculiarities of kinetic characteristics. Formally one-valley monopolar semiconductor film may behave either like a many-valley on like a bipolar semiconductor.