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Resonant polaron coupling of the n = 1 Landau level and the 2p+ donor state in GaAs
Authors:H. Sigg  H.J.A. Bluyssen  P. Wyder
Affiliation:Physics Laboratory and Research Institute for Materials, University of Nijmegen, Toernooiveld, Nijmegen, The Netherlands
Abstract:
The n = 0 → > n = 1 Landau level and 1s ?2p+ impurity transitions in GaAs were investigated up to energies above the optical phonon energy ?ΩLO and d.c. magnetic fields up to 25 T. Pinning of both transitions to an energy slightly above and below ?ΩLO was observed. At an energy very close to ?ΩLO two additional impurity transitions are found. These features are attributed to the resonant polaron effect which leads to hybridization and dipole selection rule breakdown. Also the spin doublet splitting of both transitions were resolved showing a strong magnetic field dependence which can not be explained by nonparabolicity of the conduction band alone.
Keywords:
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