| SiGe/Si量子阱的低温光荧光和电注入发光 |
| |
| 引用本文： | 董文甫,崔堑.SiGe/Si量子阱的低温光荧光和电注入发光[J].发光学报,1996,17(2):128-132. |
| |
| 作者姓名： | 董文甫 崔堑 |
| |
| 作者单位： | 1. 集成光电子学国家联合实验室, 北京100083;2. 中国科学院半导体所, 北京100080 |
| |
| 摘 要： | 使用Si-MBE生长了阶梯形折射率分布SiGe/Si量子阱材料,在低温下观测到无声子参与的光荧光和电注入发光。阶梯形折射率分布SiGe/Si电子阱结构有利于提高发光效率。讨论了这种结构的光学和电学特性。
|
| 关 键 词： | SiGe/Si量子阱 光荧光 电注入发光 |
| 收稿时间： | 1995-07-26 |
PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE FROM SiGe/Si QUANTUM WELL WITH LOW TEMPERATURES |
| |
| Dong Wenfu,Wang Qiming,Yang Qinqing.PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE FROM SiGe/Si QUANTUM WELL WITH LOW TEMPERATURES[J].Chinese Journal of Luminescence,1996,17(2):128-132. |
| |
| Authors: | Dong Wenfu Wang Qiming Yang Qinqing |
| |
| Institution: | 1. National Integrated Optoelectronics Lab.Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083;2. Institute of Physics, Chinese Academy of Sciences, Beijing 100080 |
| |
| Abstract: | Photoluminescence and electroluminescence were observed under low temperature from step graded index SiGe/Si quantum well grown by molecular beam epitaxy.The SiGe/Si step graded index quantum well structure is beneficial to enhance its light emitting efficiency. The optical and electrical properties of this structure were discussed in this paper. |
| |
| Keywords: | SiGe/Si quantum well photoluminescence electroluminescence |
| 本文献已被 CNKI 维普 等数据库收录！ |
| 点击此处可从《发光学报》浏览原始摘要信息 |
| 点击此处可从《发光学报》下载免费的PDF全文 |
