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跨温区互联技术
引用本文:原蒲升,余慧勤,汪书娜,王永良,李凌云,尤立星. 跨温区互联技术[J]. 低温物理学报, 2020, 0(3): 117-128
作者姓名:原蒲升  余慧勤  汪书娜  王永良  李凌云  尤立星
作者单位:中国科学院上海微系统与信息技术研究所, 信息功能材料国家重点实验室, 上海 200050;中国科学院超导电子学卓越创新中心, 上海 200050,中国科学院上海微系统与信息技术研究所, 信息功能材料国家重点实验室, 上海 200050;中国科学院超导电子学卓越创新中心, 上海 200050,中国科学院上海微系统与信息技术研究所, 信息功能材料国家重点实验室, 上海 200050;中国科学院超导电子学卓越创新中心, 上海 200050,中国科学院上海微系统与信息技术研究所, 信息功能材料国家重点实验室, 上海 200050;中国科学院超导电子学卓越创新中心, 上海 200050,中国科学院上海微系统与信息技术研究所, 信息功能材料国家重点实验室, 上海 200050;中国科学院超导电子学卓越创新中心, 上海 200050,中国科学院上海微系统与信息技术研究所, 信息功能材料国家重点实验室, 上海 200050;中国科学院超导电子学卓越创新中心, 上海 200050
基金项目:上海市科委自然科学基金(批准号:19ZR1467400)资助的课题;
摘    要:以半导体材料为基础的微电子技术正面临尺寸极限和功耗的双重挑战与发展瓶颈.低温电子学作为突破上述瓶颈的新兴应用研究学科之一,得到科研和产业界越来越多的关注.2017年起,低温电子学和量子信息处理被国际器件与系统路线图(IRDS)列为重点关注的十大焦点领域之一.以低温到室温的微弱、高频电信号传输为核心的跨温区互联技术是低温电子学和量子信息处理必须解决的关键技术之一.本文对跨温区互联面临的主要问题与挑战、目前的进展和未来展望进行了综述,为我国开展相关研究工作提供参考.

关 键 词:低温电子  超导电子  高速互联

Interconnection Technology Across Temperature Zones
YUAN Pusheng,YU Huiqin,WANG Shun,WANG Yongliang,LI Lingyun and YOU Lixing. Interconnection Technology Across Temperature Zones[J]. Chinese Journal of Low Temperature Physics, 2020, 0(3): 117-128
Authors:YUAN Pusheng  YU Huiqin  WANG Shun  WANG Yongliang  LI Lingyun  YOU Lixing
Affiliation:State Key Laboratory of Functional Materials for Informatics , Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences , Shanghai 200050, China; Shanghai Centerfor Superconductivity , Chinese Academy of Sciences , Shanghai 200050, China,State Key Laboratory of Functional Materials for Informatics , Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences , Shanghai 200050, China; Shanghai Centerfor Superconductivity , Chinese Academy of Sciences , Shanghai 200050, China,State Key Laboratory of Functional Materials for Informatics , Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences , Shanghai 200050, China; Shanghai Centerfor Superconductivity , Chinese Academy of Sciences , Shanghai 200050, China,State Key Laboratory of Functional Materials for Informatics , Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences , Shanghai 200050, China; Shanghai Centerfor Superconductivity , Chinese Academy of Sciences , Shanghai 200050, China,State Key Laboratory of Functional Materials for Informatics , Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences , Shanghai 200050, China; Shanghai Centerfor Superconductivity , Chinese Academy of Sciences , Shanghai 200050, China and State Key Laboratory of Functional Materials for Informatics , Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences , Shanghai 200050, China; Shanghai Centerfor Superconductivity , Chinese Academy of Sciences , Shanghai 200050, China
Abstract:Microelectronic technology based on semiconductor materials is facing the dual challenges and development bottlenecks of size limit and power consumption. As one of the emerging applied research disciplines that breaking through the abovementioned bottleneck, cryogenic electronics has attracted more and more attention from scientific research and industry. Since 2017, cryogenic electronics and quantum information processing have been listed as one of the top ten focus areas on International Roadmap For Devices And Systems (IRDS). The cross temperature interconnection technology with weak, high-frequency electrical signal transmission from low temperature to room temperature as the core is one of the key technologies that must be solved in cryogenic electronics and quantum information processing. Thisarticlesummarizesthe main problems and challenges faced by the inter-temperature zone interconnection, the current progress and future prospects, and provides references for our country to carry out related research work
Keywords:Cryogenic electronics   superconductive electronics   high-speed interconnection
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