| 单电子晶体管的制备与表征 |
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| 引用本文： | 吴小宇,赵虎,李智.单电子晶体管的制备与表征[J].低温物理学报,2020(2):97-102. |
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| 作者姓名： | 吴小宇 赵虎 李智 |
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| 作者单位： | 四川大学电子信息学院 成都 610065,航空工业西安飞行自动控制研究所, 西安 710065,四川大学电子信息学院 成都 610065 |
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| 摘 要： | 单电子晶体管是一种非常重要的器件, 在量子计算、 电荷探测领域具有重要应用. 由于其尺寸极小, 很容易受到静电的影响导致损坏, 并且对于测试条件要求苛刻, 制备与观测较为困难. 本文用双角度蒸发的方法制备了SET, 在稀释制冷机的10 mK 极低温度下, 对SET 的基本性能进行了测试和表征. 针对制备、 运输、 测试以及安装的全流程提出了一整套静电防护方案.
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| 关 键 词： | 单电子晶体管 双角度蒸发 约瑟夫森结 静电防护 |
The Fabrication and Measurement of Single Electron Transistor |
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| WU Xiaoyu,ZHAO Hu and LI Zhi.The Fabrication and Measurement of Single Electron Transistor[J].Chinese Journal of Low Temperature Physics,2020(2):97-102. |
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| Authors: | WU Xiaoyu ZHAO Hu and LI Zhi |
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| Abstract: | Single electron transistor(SET) is a veryimportant device, which has animportant applicationin the field of quantum computation and charge detection. Because of its small size, it is easy to be damaged by static electricity, and the test conditions are very demanding, soitis difficult to fabricate and observe. In this paper, the SET is fabricated by two angle evaporation. The basic properties of the SET are tested and characterized at the extremely low temperature of 10 mKin dilution refrigerator. For the whole process offabrication, transportation, testing and installation, a set of electrostatic protection scheme is proposed. |
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| Keywords: | SET two angle evaporation Josephson junction Electrostatic protection |
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