Characteristics of ZnO:In thin films prepared by RF magnetron sputtering |
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| Authors: | L.P. Peng L. Fang X.F. Yang H.B. Ruan Y.J. Li Q.L. Huang C.Y. Kong |
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| Affiliation: | aDepartment of Applied Physics, Chongqing University, Chongqing 400030, PR China;bKey laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, Chongqing University, Chongqing 400030, PR China;cDepartment of Applied Physics, Chongqing Normal University, Chongqing 400047, PR China |
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| Abstract: | In-doped ZnO (ZnO:In) transparent conductive thin films were deposited on glass substrates by RF magnetron sputtering. The effect of substrate temperature on the structural, electrical and optical properties of the ZnO:In thin films was investigated. It was found that higher temperature improves the crystallinity of the films and promotes In substitution easily. ZnO:In thin films with the best crystal quality were fabricated at 300 °C, which exhibit a larger grain size of 29 nm and small tensile strain of 0.9%. The transmittance of all the films was revealed to be over 85% in the visible range independence of the substrate temperatures and the lowest resistivity of ZnO:In thin films is 2.4×10−3 Ω cm. |
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| Keywords: | ZnO:In thin films RF magnetron sputtering Optical and electrical properties |
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