Laser-induced implantation and diffusion of magnesium into silicon

Laser-induced diffusion (“implantation”) of magnesium atoms into silicon was studied experimentally. Neodymium-glass laser irradiation (λ=1.06 μm, τ ∼ 0.4 ms) was found to increase the diffusion coefficient and solubility of magnesium in silicon. Current-voltage and capacity-voltage characteristics, as well as thermostimulated current spectra of 〈Si + Mg〉 crystals, were obtained.