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Growth of periodic Hg1−x MnxTe structures by liquid-phase epitaxy
Authors:S V Kletskii
Institution:(1) Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 252028 Kiev, Ukraine
Abstract:A procedure for the calculation of phase equilibria in the tellurium corner of the phase diagram of the ternary system Mn-Hg-Te is described within the framework of the model of regular associated solutions. The initial concentrations of the nonstoichiometric fluxed melts and the temperature regimes of their cooling for the controlled liquid-phase epitaxial growth of inhomogeneous Hg1−x MnxTe structures with prescribed modulation of the composition along their thickness are determined by numerical solution of a nonlinear inverse Stefan problem. Zh. Tekh. Fiz. 67, 64–67 (September 1997)
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