Growth of periodic Hg1−x
MnxTe structures by liquid-phase epitaxy |
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Authors: | S V Kletskii |
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Institution: | (1) Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 252028 Kiev, Ukraine |
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Abstract: | A procedure for the calculation of phase equilibria in the tellurium corner of the phase diagram of the ternary system Mn-Hg-Te
is described within the framework of the model of regular associated solutions. The initial concentrations of the nonstoichiometric
fluxed melts and the temperature regimes of their cooling for the controlled liquid-phase epitaxial growth of inhomogeneous
Hg1−x
MnxTe structures with prescribed modulation of the composition along their thickness are determined by numerical solution of
a nonlinear inverse Stefan problem.
Zh. Tekh. Fiz. 67, 64–67 (September 1997) |
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Keywords: | |
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