Effect of sweeping voltage and compliance current on bipolar resistive switching and white-light controlled Schottky behavior in epitaxial BaTiO3 (111) thin films |
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| Institution: | 1. Laboratory Physico-Chemistry of Advanced Materials, University of Djillali Liabes, BP 89, Sidi- Bel- Abbes 22000, Algeria;2. Institute of Nano Electronic Engineering, University Malaysia Perlis, 01000 Kangar, Perlis, Malaysia;3. Materials Science Laboratory, School of Physics, Vigyan Bhavan, Devi Ahilya University, Khandwa Road Campus, Indore 452001, India;4. Djillali Liabes University, Faculty of Exact Sciences, Department of Physics, PO Box 089, Sidi Bel Abbes 22000, Algeria;1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;2. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;1. School of Physical Science and Technology, Southwest Jiaotong University, Key Laboratory of Advanced Technologies of Materials, Ministry of Education of China, Chengdu 610031, People''s Republic of China;2. Bond and Band Engineering Group, Sichuan Provincial Key Laboratory (for Universities) of High Pressure Science and Technology, Southwest Jiaotong University, Chengdu 610031, People''s Republic of China;3. State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi''an 710072, People''s Republic of China;1. Atatürk University, Sciences Faculty, Department of Chemistry, 25240 Erzurum, Turkey;2. Atatürk University, East Anatolian High-Technology Research and Application Center, 25240 Erzurum, Turkey;1. Department of Physics, Manonmaniam Sundaranar University, Tirunelveli 627012, Tamilnadu, India;2. CISL, Department of Physics, Annamalai University, Annamalai Nagar 608002, Tamilnadu, India |
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| Abstract: | Bipolar resistive switching (RS) phenomenon without required electroforming has been observed in epitaxial (111)-oriented BaTiO3 (BTO) thin films deposited by PLD technique on conducting Nb-doped substrate of SrTiO3 (NSTO). Negative differential resistance (NDR) is observed at about ?5 V when the maximum of positive voltage exceeds 7 V and the compliance current is more than 1.5 mA. And bipolar resistive switching has also been observed. In addition, the resistance of LRS decreases with increasing compliance current or the maximum of positive voltage while that of HRS barely changes, and the resistance of HRS increases with increasing the absolute of maximum of negative voltage while that of LRS scarcely changes. A typical rectifying behavior is observed when the maximum of positive voltage is less than 4 V (such as 2 V). In this case, the reverse biased current is strongly enhanced under illumination of white-light, and vice versa. The resistance of LRS and HRS can be controlled by the applied voltage or the compliance current. The rectifying behavior can be controlled by the white-light. The transition from rectifying behavior to bipolar resistive switching can be controlled by the applied voltage. The above results were discussed by considering the oxygen vacancies that can trap or release electrons as a trapping layer at the Pt/BTO interface. |
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| Keywords: | Bipolar resistance switching Negative differential resistance White-light Schottky behavior |
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