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Cross Sections of Electron Detachment for Si^- and Ge^- in Collision with Ar
引用本文:高梅 杨恩波 刘永 张雪梅 陆福全. Cross Sections of Electron Detachment for Si^- and Ge^- in Collision with Ar[J]. 中国物理快报, 2006, 23(12): 3253-3255
作者姓名:高梅 杨恩波 刘永 张雪梅 陆福全
作者单位:[1]Key Lab of Applied Ion Beam Physics of MOE, Fudan University, Shanghai 200433 [2]Shanghai EBIT Lab, Institute of Modern Physics, Fudan University, Shanghai 200433
基金项目:Supported by the National Natural Science Foundation of China under Grant No 10204006, and the Excellent Young Teachers Programme of the Ministry of Education of China.
摘    要:

关 键 词:电子解离 截面 硅离子 锗离子 氩离子 负离子碰撞
收稿时间:2006-09-11
修稿时间:2006-09-11

Cross Sections of Electron Detachment for Si- and Ge- in Collision with Ar
GAO Mei,YANG En-Bo,LIU Yong,ZHANG Xue-Mei,LU Fu-Quan. Cross Sections of Electron Detachment for Si- and Ge- in Collision with Ar[J]. Chinese Physics Letters, 2006, 23(12): 3253-3255
Authors:GAO Mei  YANG En-Bo  LIU Yong  ZHANG Xue-Mei  LU Fu-Quan
Affiliation:¹Key Lab of Applied Ion Beam Physics of MOE, Fudan University, Shanghai 200433²Shanghai EBIT Lab, Institute of Modern Physics, Fudan University, Shanghai 200433
Abstract:Single electron detachment cross section for 10-40keV Si^- and Ge^- in collisions with Ar are measured and compared with other available experimental results. In our experimental energy region, the trend of cross sections is almost constant. The cross sections of Ge larger than Si can be understood by including electron affinity and size of negative ions.
Keywords:34. 70. +e  34. 50. Dy
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