Femtosecond first-order autocorrelation measurement based one-photon induced photocurrent in Si Schottky diodes |
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Authors: | Shihua Huang |
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Institution: | aPhysics Department, Zhejiang Normal University, Zhejiang 321004, China |
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Abstract: | Si Schottky diodes promise to provide cheap, reliable, and linear detectors for use in femtosecond and picosecond pulse width measurement. At low pulse excitation density (<100 pJ/cm2), the pulse width can be deduced from the first-order autocorrelation, and the measured results are in agreement with the theoretical ones. When pulse excitation density is larger than 1 nJ/cm2, the pulse trailing edge is distorted due to bandgap reduction in semiconductor Si and the pulse width cannot be measured accurately by means of the first-order autocorrelation. The interference fringes presented in the first-order autocorrelation measurement can provide a way of calibrating the delay, and the pulse width can also be obtained by calculating the number of interference fringes. |
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Keywords: | First-order autocorrelation Femtosecond pulse width Si Schottky diode |
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