|
|||||
|
|
Defect reduction in ZnMgSSe epilayers on GaAs by using ZnMgSe/ZnSSe strained-layer superlattices |
|
| Authors: | J-S Kim S-H Suh C-H Kim S-J Chung |
| Institution: | a Div. of Electronics and Information Technology, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul, Korea b Department of Inorganic Material Engineering, Seoul National University, Seoul, 151-742, Korea |
| Abstract: | Effectiveness of ZnMgSe/ZnSSe strained layer superlattices(SLSs) in reducing threading dislocations of ZnMgSSe has been studied. Transmission electron microscopy has been used to investigate the dislocation structure. The strained layer superlattice buffer was effective in blocking threading dislocations. The surface dislocation in ZnMgSSe could be reduced by using the ZnMgSe/ZnSSe SLSs. The dislocation density would be reduced further by adjusting the stress level of SLS layer or by designing it properly. |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ | |