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Effect of backgating on the field distribution in planar thin-film GaAs structures |
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| Authors: | Nikolai B Gorev Inna F Kodzhespirova Yury A Kovalenko Evgeny N Privalov Eugenio F Prokhorov |
| Institution: | a Department for Functional Elements of Control Systems, Institute of Technical Mechanics of the National Academy of Sciences of Ukraine, 15 Leshko-Popel St., Dnepropetrovsk 49005, Ukraine b Laboratorio de Investigacion en Materiales, Centro de Investigacion y de Estudios Avanzados del IPN, Unidad Queretaro, Apardo Postal 1-798, Gral. Arteaga No. 5, Queretaro, 760001 Qro., Mexico |
| Abstract: | The distribution of the electric field in planar film–substrate GaAs structures under backgating is considered. It is shown that backgating can make the film exhibit a long-length region of a low-gradient electric field exceeding the threshold of N-type negative differential mobility, the magnitude of negative differential mobility in this region being high enough. At values of the film doping density and film thickness typical of GaAs transferred-electron devices, this region can be as long as several tens of micrometers. The underlying physical mechanism is discussed. |
| Keywords: | Backgating GaAs structures Negative differential mobility |
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