High-pressure study of tetramethylsilane by Raman spectroscopy |
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Authors: | Qin Zhen-Xing Zhang Jian-Bo Troyan Ivan Palasyuk Taras Eremets Mikhail Chen Xiao-Jia |
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Affiliation: | Department of Physics, South China University of Technology, Guangzhou 510640, China. |
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Abstract: | High-pressure behavior of tetramethylsilane, one of the Group IVa hydrides, was investigated by Raman scattering measurements at pressures up to 142 GPa and room temperature. Our results revealed the phase transitions at 0.6, 9, and 16 GPa from both the mode frequency shifts with pressure and the changes of the full width half maxima of these modes. These transitions were suggested to result from the changes in the inter- and intra-molecular bonding of this material. We also observed two other possible phase transitions at 49-69 GPa and 96 GPa. No indication of metallization in tetramethylsilane was found with stepwise compression to 142 GPa. |
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