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Properties of the GaAs–Si Interface in Epitaxy through an Aluminum Layer |
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| Authors: | F. M. Katsapov L. V. Lakoza E. A. Tyavlovskaya |
| Affiliation: | (1) Institute of Electronics, National Academy of Sciences of Belarus, 22 Logoiskii Trakt, Minsk, 220090, Belarus |
| Abstract: | The interaction of elements near the interface during epitaxial growth of monocrystalline GaAs films through an aluminum layer is investigated by the methods of x-ray photoelectronic spectroscopy and secondary-ion mass spectroscopy. |
| Keywords: | epitaxial layers x-ray photoelectronic spectroscopy secondary ion mass spectroscopy gallium arsenide |
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