| 不同原料DKDP晶体的生长和损伤阈值 |
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| 引用本文： | 孙绍涛,季来林,王正平,刘冰,牟晓明,孙洵,许心光,史崇德. 不同原料DKDP晶体的生长和损伤阈值[J]. 强激光与粒子束, 2008, 20(5): 755-759 |
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| 作者姓名： | 孙绍涛 季来林 王正平 刘冰 牟晓明 孙洵 许心光 史崇德 |
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| 作者单位： | 山东大学,晶体材料国家重点实验室,济南,250100;中国工程物理研究院,上海激光等离子体研究所,上海,201800;海军航空工程学院,基础部,山东,烟台,264001 |
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| 基金项目： | 国家自然科学基金委员会-中国工程物理研究院NSAF联合基金 , 国家高技术研究发展计划(863计划) |
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| 摘 要： | 采用传统降温法，利用不同原料从氘化程度为85%的溶液生长了四方相磷酸二氘钾(DKDP)晶体，并选取部分样品进行三倍频光损伤阈值测试。实验结果表明：不同纯度原料对DKDP晶体的损伤阈值以及DKDP晶体的生长溶液稳定性的影响效果相反，即由于原料中杂质金属离子含量的差别，高纯原料生长的晶体较一般原料生长的晶体损伤阈值可提高1.5倍，但其生长溶液的稳定性比一般原料低。
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| 关 键 词： | DKDP晶体 损伤阈值 晶体生长 传统降温法 惯性约束聚变 |
| 收稿时间： | 1900-01-01; |
Growth and laser damage threshold of DKDP crystal from different material |
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| SUN Shao-tao,JI Lai-lin,WANG Zheng-ping,LIU Bing,MU Xiao-ming,SUN Xun,XU Xin-guang,SHI Chong-de. Growth and laser damage threshold of DKDP crystal from different material[J]. High Power Laser and Particle Beams, 2008, 20(5): 755-759 |
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| Authors: | SUN Shao-tao JI Lai-lin WANG Zheng-ping LIU Bing MU Xiao-ming SUN Xun XU Xin-guang SHI Chong-de |
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| Affiliation: | 1. State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China; 2. Shanghai Institute of Laser Plasmas，CAEP，P.O.Box 800-229, Shanghai 201800， China; 3. Naval Aeronautical Engineering Institute Basic Department, Yantai 264001, China |
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| Abstract: | In this paper, DKDP crystals were grown from 85%-deuterated solution of different materials by traditional temperature-reduction method. Then some of the crystals were chosen to test laser damage threshold by the third harmonic generation of 1 064 nm. It was found that the solution stability of DKDP crystal growth dropped slightly, but obviously, and the laser damage threshold increased for purer raw material as the metallic ionic impurity varied in the materials. |
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| Keywords: | Laser damage threshold Crystal growth Traditional temperature-reduction method Inertial confined fusion |
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