Highly efficient 1063-nm continuous-wave laser emission in Nd:GdVO4 |
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Authors: | Lupei V Pavel N Sato Y Taira T |
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Institution: | Institute of Atomic Physics, Solid State Quantum Electronics Laboratory, Bucharest, R-76900 Romania. v.lupei@pluto.infim.ro |
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Abstract: | Highly efficient 1-microm continuous-wave laser emission in 3-mm-thick, 0.5- and 1.0-at. % Nd:GdVO4 crystals longitudinally pumped at 879 nm into the laser emitting level is reported. Under Ti:sapphire pumping, the slope efficiency in absorbed power is approximately 80% for both crystals, while the slope efficiency, the optical-to-optical efficiency (at 1700-mW pump power), and the laser threshold in incident power are 79%, 78%, and 31 mW for 0.5-at. % Nd and 80%, 77%, and 40 mW for 1.0-at. % Nd, respectively. The slope efficiency is close to the quantum defect limit, the difference being fully accounted for by the residual optical losses. Under 879-nm diode laser pumping, the slope efficiency and the optical-to-optical efficiency in absorbed power of the 0.5-at. % Nd:GdVO4 crystal are 60% and 53%, owing to poorer superposition of the pumped and the laser mode volumes. |
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