Vertical electronic transport in novel semiconductor heterojunction structures |
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| Institution: | 1. School of Environment and Architecture, University of Shanghai for Science and Technology, Shanghai 200093, China;2. School of Environmental and Chemical Engineering, Shanghai University, Shanghai 200444, China;1. Beijing Key Laboratory for Theory and Technology of Advanced Battery Materials, Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China;2. Department of Materials Science and Engineering, Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA;1. Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan;2. Department of Physics, National Taiwan University, Taipei 10617, Taiwan;3. Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan;4. International Graduate Program of Molecular Science and Technology (NTU-MST), National Taiwan University, Taipei 10617, Taiwan;5. Molecular Science and Technology Program, Taiwan International Graduate Program (TIGP), Academia Sinica, Taipei 11529, Taiwan;6. International Center for Young Scientists (ICYS) and WPI International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan;7. Center of Atomic Initiative for New Materials (AI-MAT), National Taiwan University, Taipei 10617, Taiwan;1. Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics, Southeast University, Nanjing 211189, China;2. Institute for Science and Applications of Molecular Ferroelectrics, Department of Chemistry, Zhejiang Normal University, Jinhua 321004, China |
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| Abstract: | The investigation of vertical transport in semiconductor heterojunction systems has recently undergone a renaissance due to improved epitaxial techniques in a number of material systems. By using resonant tunneling, we can perform electronic spectroscopy not only of the double barrier structure itself, but of any system (with quantized well states) suitably coupled to a resonant tunneling spectrometer. In designing such systems, an important degree of freedom is introduced by utilizing multi-component structures; for example, a GaAs contact — AlGaAs barrier — InGaAs quantum well. In this structure, the high electron affinity of the quantum well creates a “deep” quantum well, in which we demonstrate that quantum well states can be hidden from transport. Finally, we present results from microfabricated quantum well structures (“quantum dots”) which are sufficiently small in the lateral dimension to introduce size effects. Telegraph noise due to the lateral size of these structures has been observed, and the first indications of lateral quantization in all three dimensions in a semiconductor quantum well are presented. |
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