p-type ohmic contacts to AlGaAs/GaAs heterostructures |
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| Affiliation: | 1. Dept. of Computer Science, Shanghai Normal University, No. 100 Guilin Road, Shanghai 200234, China;2. Key Laboratory of Interfacial Physics and Technology, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800, China;3. Shanghai Key Lab of Modern Optical System and Engineering Research Center of Optical Instrument and System, Ministry of Education, University of Shanghai for Science and Technology, China;4. State Key Laboratory of Millimeter Waves, Southeast University, Nanjing 210096, China;1. Institute of High Pressure Physics PAS, Sokolowska 29/37, 01-142 Warsaw, Poland;2. TopGaN Ltd, Sokolowska 29/37, 01-142 Warsaw, Poland;1. Institute of Electronics and Photonics, FEI STU, Ilkovičova 3, SK-812 19 Bratislava, Slovakia;2. New Technologies-Research Centre, University of West Bohemia, Univerzitní 8, 30614 Plzeň, Czech Republic;1. Materials Science and Informatics Laboratory, Faculty of Science, University of Djelfa, 17000 Djelfa, Algeria;2. Laboratory of Materials Physics and Its Applications, University of M''sila, 28000 M''sila, Algeria;3. Laboratoire de Physique des couches minces et applications, University of Biskra, 7000 Biskra, Algeria |
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| Abstract: | Ohmic contacts to p-AlGaAs/GaAs heterostructures have larger resistivities compared to n-type structures because holes are heavier than electrons and the heterointerface barrier for high mobility structures is thicker. This work shows that diffusion of Zn during an alloy process of a Au/Zn/Au metallization establishes high acceptor concentrations throughout the heterostructure resulting in a thin metal-semiconductor barrier and probably a degradation of the heterointerface barrier by disordering, while the heterostructure outside the contact region remains unchanged. Contact resistivities down to 3.5ωmm at 25K could thus be achieved. |
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