Exchange-correlation energy in the subbands of silicon doping superlattices |
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| Institution: | 1. Centro de Nanociencias y Nanotecnología, Universidad Nacional Autónoma de México, Km. 107, Apdo. Postal 14. Carretera Tijuana-Ensenada, Ensenada, Baja CA, Mexico;2. Facultad de Ciencias Físico Matemáticas, Universidad Autónoma de Nuevo León, 66451, San Nicolas de los Garza, Nuevo León, Mexico;3. Institute of Theoretical and Applied Research, Duy Tan University, Ha Noi 100000, Vietnam;4. Faculty of Natural Sciences, Duy Tan University, Da Nang 550000, Vietnam |
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| Abstract: | The energy subbands in three types (pn+p, pnpn, nipi) of Si and GaAs doping superlattices are calculated self-consistently including the exchange-correlation energy given by the density functional method. The results show that the exchange-correlation term is more important in Si than in GaAs in all three cases. For the same doping levels, layer thicknesses and electron concentrations, the shift in the lowest subband energy from the value given by the Hartree Approximation is 20–50% greater in Si than in GaAs. |
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