Crystallinity and interdiffusion in InP/InGaAs quantum wells grown by Hydride VPE |
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| Affiliation: | 1. School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW 2052, Australia;2. School of Chemistry, University of New South Wales, Sydney, NSW 2052, Australia;1. National Renewable Energy Laboratory, Golden, CO 80401, USA;2. Colorado School of Mines, Department of Metallurgical and Materials Engineering, Golden, CO 80401, USA;3. Colorado School of Mines, Department of Physics, Golden, CO 80401, USA;4. Crystal Sonic Inc., Phoenix, AZ 85003, USA;5. Arizona State University, School of Electrical, Computer, and Energy Engineering, Tempe, AZ 85287, USA;1. State Key Laboratory of Luminescent Materials and Devices, School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China;2. Guangdong Choicore Optoelectronics Co., Ltd., Heyuan 517003, China;3. Department of Electronic Materials, School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China |
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| Abstract: | This paper reports the results of a study on interfacial quality and thermal interdiffusion for InP/InGaAs Quantum Wells (QW) grown by hydride VPE. By controlling well layer as thin as 25 Å, it was estimated that island and valley, whose height was one monolayer and whose lateral size was one third of exciton radius, existed at the interface. For the first time, interdiffusion coefficients for InP/InGaAs QW were obtained from 77K PL peak energy shift. Typical values were 2.5×10−19 cm2/sec and 1.5×10−18 cm2/sec for the annealing temperature of 700°C and 750°C, respectively. These values are over 102 times larger than that in AlGaAs/GaAs QW, and less 10−2 times smaller than that in InAlAs/InGaAs QW. |
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