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Pressure dependence study of the effective mass in Ga0.47In0.53As/InP heterojunctions
Institution:1. CNRS-INSA F 31077 Toulouse-Cedex, France;2. CNRS-SNCI, 166 X F 38042 Grenoble-Cedex France;1. Faculty of Materials Metallurgy and Chemistry, Jiangxi University of Science and Technology, Ganzhou, 341000, PR China;2. National Engineering Research Center for Ionic Rare Earth, Ganzhou, 341000, PR China;3. Key Laboratory of Rare Earth Luminescence Materials and Devices of Jiangxi Province, Ganzhou, 341000, PR China;4. Nation Rare Earth Functional Materials Manufacturing Innovation Centre, Ganzhou, 341000, PR China;1. Faculty of Science and Technology, Jan Długosz University, Armii Krajowej 13/15, PL-42200, Czestochowa, Poland;2. Center of Innovative Development of Science and New Technologies, National Academy of Sciences of Tajikistan, Dushanbe, 734025, Tajikistan;3. Frantsevych Institute for Problems of Materials Science, National Academy of Sciences of Ukraine, 3 Krzhyzhanivsky Str., UA-03142, Kyiv, Ukraine;4. Faculty of Science and Engineering, Waseda University, Tokyo, 169-8555, Japan;5. Institute of Condensed-Matter Science, Waseda University, Tokyo, 169-8555, Japan;1. School of Optoelectronic Engineering & CQUPT-BUL Innovation Institute, Chongqing University of Posts and Telecommunications, Chongqing, 400065, China;2. Center of Innovative Development of Science and New Technologies, National Academy of Sciences of Tajikistan, Dushanbe, 734025, Tajikistan;3. Kagami Memorial Research Institute for Materials Science and Technology, Waseda University, Tokyo, 169-0051, Japan;4. Current Lighting Solutions LLC, 1099 Ivanhoe Road, Cleveland, OH, 44110, USA;5. Centre of Excellence for Photoconversion, Vinča Institute of Nuclear Sciences - National Institute of the Republic of Serbia, University of Belgrade, Belgrade, Serbia;6. Institute of Physics, University of Tartu, W. Ostwald Str. 1, 50411, Tartu, Estonia;7. Faculty of Science and Technology, Jan Długosz University, Armii Krajowej 13/15, PL-42200, Częstochowa, Poland;8. Academy of Romanian Scientists, Ilfov Str. No. 3, 050044, Bucharest, Romania;9. Faculty of Science and Engineering, Waseda University, Tokyo, 169-8555, Japan;10. Institute of Condensed-Matter Science, Waseda University, Tokyo, 169-8555, Japan
Abstract:A study of the effective mass in GaInAs/InP heterojunctions under hydrostatic pressure up to 15 kbars is presented. Earlier results have shown the importance of hydrostatic pressure effects on the band parameters of the heterojunction to explain the experimental decrease of the carrier concentration with pressure at the interface (1). Here magnetophonon resonance experiments are performed to work out the increase of mass with pressure in our samples. The effective mass at atmospheric pressure is deduced from high temperature cyclotron resonance experiments and then used to calculate the frequency of the phonon interacting with the 2D electron gas (wo). The value of wo is found to be dependent on the carrier concentration of the measured samples. The lowest value is found for the highest carrier concentration sample.A band edge effective mass increase of 1 ± .1% kbar is found in the highest carrier concentration sample. This is two times smaller than the rate found experimentally in GaInAs bulk material and slightly smaller than in an AlInAs/GaInAs heterojunction. The experimental increase could be fitted with multiband k.p theory assuming no pressure dependence for the conduction band-valence band matrix element Ep. However at lower concentration a variation of the matrix element Ep with pressure has to be considered.
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