Resonant tunneling field-effect transistors |
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| Affiliation: | 1. Hubei Key Laboratory of Optical Information and Pattern Recognition, School of Mathematics and Physics, Wuhan Institute of Technology, Guanggu 1st Road 206, Wuhan 430205, PR China;2. Center for Nanoscale Characterization and Devices, Wuhan National Laboratory for Optoelectronics, and School of Physics, Huazhong University of Science and Technology, Luoyu Road 1037, Wuhan 430074, PR China;3. School of Material Science and Engineering, Wuhan University of Technology, Luoshi Road 205, Wuhan 430070, PR China;1. Dept. of Electrical Engineering, Technical University of Denmark 2800-Kgs. Lyngby, Denmark;2. III-V Lab, 1 avenue Augustin Fresnel, 91767 Palaiseau Cedex, France;1. Electronic Packaging Laboratory, University at Buffalo, NY 14260, USA;2. Arkansas State University, State University, AR 72467, USA |
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| Abstract: | We report an experimental project to incorporate double-barrier tunnel structures into three-terminal devices. These devices have the negative-differential-resistance (NDR) features of the double barrier, and the added flexibility of a third controlling electrode. One way to make such a device involves the series combination of a double-barrier tunnel structure with a field-effect transistor. We have realized this concept in two types of devices, using samples grown by metalorganic chemical vapor deposition. The devices consist of a GaAsAlxGa1−xAs double-barrier tunneling heterostructure, the current through which is controlled by either an integrated vertical field-effect transistor or a planar metal-semiconductor field effect transistor. The voltage location and peak-to-valley current ratio of the NDR present in the source-drain circuit can be modulated with gate voltage. Experimental results for four samples are presented. |
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