Photoluminescence studies of GaAs/AlAs short period superlattices |
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| Institution: | 1. School of Energy and Power Engineering, Nanjing University of Science & Technology, Nanjing 210094, China;2. School of Energy and Power Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China;1. State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, PR China;2. College of Materials & Environmental Engineering, Hangzhou Dianzi University, Xiasha Higher Education Zone, Hangzhou 310018, PR China;1. Laboratory of Optics of Quantum Materials, Department of Physics, Indian Institute of Technology Bombay, Mumbai 400076, India;2. Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Mumbai 400076, India;1. Key Laboratory of Material Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450001, China;2. School of Physical Science and Technology, Southwest Jiaotong University, Chengdu, 610031, China |
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| Abstract: | Low-temperature pressure-dependent photoluminescence measurements on short-period GaAs/AlAs superlattice structures are presented. Measurements show that the lowest energy conduction-band states are in the AlAs layers and the highest energy valence-band states are located in the GaAs layers. This result is supported by the following three experimental observations: (1) the observed pressure coefficient for the conduction-band to valence-band transition energy is negative, (2) the magnetic mass of this transition is “heavy”, and (3) the band-to-band absorption coefficient appears to be small. These experimental observations are in agreement with predictions of tight-binding calculations. |
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