Dependence of lifetime on design parameters of an nipi doping superlattice: Results of self-consistent calculations |
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| Institution: | 1. School of Intelligent Engineering, Shandong Management University, Jinan 250357, China;2. Qingdao Research Academy of Environmental Sciences, Qingdao Municipal Bureau of Ecology and Environment, Qingdao 266003, China;3. School of Remote Sensing and Information Engineering, Wuhan University, Wuhan 430000, China;4. Department of Information Engineering, University of Pisa, Pisa 56122, Italy;5. Department of Electrical and Computer Engineering, University of Kentucky, Lexington 40503, United States;1. Key Laboratory of Cenozoic Geology and Environment, Institute of Geology and Geophysics, Chinese Academy of Sciences, Beijing 100029, China;2. CAS Center for Excellence in Life and Paleoenvironment, Beijing 100044, China;3. Department of Plants, Soils, and Climate, Utah State University, Logan, UT, USA;4. State Key Laboratory of Marine Geology, Tongji University, Shanghai, China;5. Key Laboratory of Vertebrate Evolution and Human Origins of the Chinese Academy of Sciences, Institute of Vertebrate Paleontology and Paleoanthropology, Chinese Academy of Sciences, Beijing, China;6. Research Institute for Humanity and Nature, Motoyama, Kamigamo, Kita-ku, Kyoto, Japan;7. Faculty of Human Sciences, Waseda University, 2-579-15 Mikajima, Tokorozawa 359-1192, Japan;8. University of Chinese Academy of Sciences, Beijing, China;1. Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan (K-M.C., S-L.H.);2. Graduate Institute of Communication Engineering, National Taiwan University, Taipei, Taiwan (H.H.C.);3. Department of Ophthalmology, National Taiwan University Hospital, Taipei, Taiwan (Y-T.H., I-H.M.);4. Department of Ophthalmology, National Taiwan University Biomedical Park Hospital, Hsinchu, Taiwan (I-H.M.). |
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| Abstract: | This paper presents a scheme for calculating recombination lifetimes in a doping superlattice at arbitrary temperatures and forward biases. The scheme involves the self-consistent calculation of sub-band energies, populations and envelope functions, followed by the calculation of lifetime using overlap integrals. Results of these calculations are then presented for a variety of combinations of layer thicknesses and dopings, all at a temperature of 300 K and a forward bias of 1 V. Our results give room temperature lifetimes as high as ∼30 ms for n and p layer thicknesses of 750 Å each, i-layer thickness of 50 Å, and dopings in the n and p layers of 2×1018 cm−3. |
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