Direct-to-indirect band gap conversion by application of electric field in the GaSbAlSb quantum well system |
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| Affiliation: | 1. Advanced Functional Materials & Optoelectronics Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, Saudi Arabia;2. Department of Physics and Astronomy, College of Science, King Saud University, Riyadh, 11451, Saudi Arabia;3. Center for High Energy Physics, University of the Punjab, Quaid-e-Azam Campus Lahore, 54590, Pakistan;4. Department of Physics, Division of Science and Technology, University of Education, College Road, Township, Lahore, 54770, Pakistan;5. Deanship of Scientific Research, University of Bisha, Bisha, 61922, P.O. Box 551, Saudi Arabia;6. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, 100083, Beijing, China;7. Department of Physics, Faculty of Science, Imam Abdulrahman Bin Faisal University, P.O. 383, Dammam, 31113, Saudi Arabia;8. Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, UTM Skudai, 81310 Johor Bharu, Johor, Malaysia |
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| Abstract: | We propose the possibility of direct-to-indirect band-gap conversion in the GaSb/AlSb quantum well (QW) system by application of an electric field. This effect arises because the Г- and L bands are closely-spaced in energy in GaSb. As the electric field increases, the L-level in the proposed quantum well moves lower in energy than the Г-level. We have carried out theoretical calculations in the GaSb/AlSb system that show that such an effect is feasible at moderate electric fields, such as can be obtained by reverse biasing a p-i-n diode, provided that the wells comprise (Al,Ga)SB with about 10% Al, with a thickness of 100 Å. The effects of this band-gap crossover should show up in the intensity and lifetime properties of the luminescence of these quantum-well structures as a function of applied bias. |
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