Magneto-optical studies of GaAs/AlAs quantum wells |
| |
| Institution: | 1. U. S. Army Electronics Technology and Devices Laboratory, Fort Monmouth, N.J. 07703, USA;2. Department of Physics and Astronomy, State University of New York at Buffalo, N.Y. 14260, USA;1. Department of Biomedical Engineering, Yonsei University, Wonju, South Korea;2. Department of Materials Science and Engineering, Egypt-Japan University of Science and Technology, Alexandria, Egypt;3. Department of Materials Engineering, Kwame Nkrumah University of Science and Technology, Kumasi, Ghana;1. Semiconductor Materials Laboratory, Materials Science Division, Raja Ramanna Centre for Advanced Technology, Indore 452013, India;2. Homi Bhabha National Institute, Training School complex, Anushakti Nagar, Mumbai 400094, India;3. UGC-DAE Consortium for Scientific Research, Indore 452017, India;1. Department of Physics, University of Massachusetts Amherst, Amherst, MA, 01003, USA;2. Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan;3. Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan |
| |
| Abstract: | We present a magnetoreflectivity study of three GaAs/AlAs multiple quantum wells with widths 75, 100 and 150 Å. At T = 5K, the reflectivity spectra exhibit features associated with the excitons as well as interband Landau transitions. The slopes of these transitions imply that the electrons are confined in the GaAs layers. In addition, experimental values for the exciton binding energies are determined from the zero field intercepts of the Landau transitions. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
