The role of the electron-hole coulomb interaction in quantum confined stark effect |
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| Institution: | 1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200092, China;2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China |
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| Abstract: | The luminescence peak energy and tunneling lifetime of an exciton in a semiconductor quantum well with a small valence band offset in the presence of a perpendicular electric field is calculated by generalizing the variational approach of quantum confined Stark effect normally used for systems of GaAs/AlGaAs quantum wells. At a finite electric field, the electron-hole Coulomb interaction provides additional confinement to each of the carriers and significantly enhances the Stark shift and the exciton lifetime against field ionization. Numerical results are presented for ZnSe/Zn1−xMnxSe heterostructures studies in recent experiments. |
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