The mobility of electrons in strained silicon |
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| Institution: | 1. Department of Electronics Engineering, National Institute of Technology-Uttarakhand, Srinagar (Garhwal), Uttarakhand 246174, India;2. Department of Electronics and Communication Engineering, Hemvati Nandan Bahuguna Garhwal University, Srinagar (Garhwal), Uttarakhand 246174, India;1. Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan;2. Graduate School of Science and Engineering, Saitama University, Saitama 338-8570, Japan;3. National Institutes for Quantum and Radiological Science and Technology (QST), Takasaki, Gunma 370-1292, Japan;1. Christian Doppler Laboratory for Nonvolatile Magnetoresistive Memory and Logic at the Institute for Microelectronics, TU Wien, Gußhausstraße 27-29, A-1040 Wien, Austria;2. Institute for Microelectronics, TU Wien, Gußhausstraße 27-29, A-1040 Wien, Austria;3. Silvaco Europe Ltd., Cambridge, United Kingdom |
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| Abstract: | The development of Si and Si1−xGex layer growth by molecular beam epitaxy has enabled heterostructures and HEMT devices to be made with Group IV semiconductors. Strain is very important in determining the electronic behaviour of this system and as an initial step towards understanding mobility in SiGe HEMT structures a Monte Carlo technique has been used to simulate electron transport in bulk Si, strained by commensurate growth on a (001) Si1−yGey buffer. The in-plane mobility initially increases with increasing strain but then falls at higher strains and fields. Results are presented for both undoped and 1017 cm−3 n-type Si, fields of 102 to 104 Vcm−1 and strain levels up to the equivalence of growth on a Si0.25Ge0.75 buffer. The results are explained by the splitting of the degenerate conduction band minimum and the transition probability between the two-fold and four-fold split minima. |
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