Growth of high quality CoSi2/Si - superstructures on Si (111)期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

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Growth of high quality CoSi2/Si - superstructures on Si (111)

Institution:	1. Institute for Microtechnologies (IMtech), RheinMain University of Applied Sciences, Am Brückweg 26, 65428, Rüsselsheim, Germany;2. IV. Physical Institute, University of Göttingen, Friedrich-Hund-Platz 1, 37077, Göttingen, Germany;1. Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, 464-8603, Japan;2. Institute of Materials and Systems for Sustainability, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, 464-8601, Japan;1. National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, 305-8568, Japan;2. Graduate School of Engineering, Nagoya University, Aichi, Japan

Abstract:	Using a newly developed solid phase epitaxy technique (SPE) it is shown that ultrathin essentially pinhole-free CoSi₂ layers can be grown epitaxially on Si (111). These form the basis of a number of short period metal/semiconductor superlattices that have been grown by combining SPE-grown CoSi₂ with MBE-grown Si. Substrate temperatures for Si-MBE have to be chosen very low (≈ 350 °C) in order to avoid a roughening of the layers.

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