Negative capacitance in doped bi-layer organic light-emitting devices |
| |
Authors: | Li Nuo Gao Xin-Dong Xie Zuo-Ti Sun Zheng-Yi Ding Xun-Min Hou Xiao-Yuan |
| |
Affiliation: | Surface Physics Laboratory (National Key Laboratory), Fudan University, Shanghai 200433, China |
| |
Abstract: | This paper reports that the doped bi-layer organic light-emitting devices are fabricated by doping in different regions of the light-emitting layer, the admittance and luminance spectra to characterize the capacitance and luminance of the device are measured. Negative capacitance (NC) appeared at low frequencies when the doped devices are biased with high voltages. The measured phase difference between AC voltage applied across the device and AC current flowing through the device show that the device is inductive when NC appears. |
| |
Keywords: | negative capacitance doping in different regions organic light-emitting device |
本文献已被 维普 等数据库收录! |
| 点击此处可从《中国物理 B》浏览原始摘要信息 |
|
点击此处可从《中国物理 B》下载免费的PDF全文 |