Investigation of electrical properties of PANI/chalcogenide junctions |
| |
| Authors: | Vinodini Shaktawat Dinesh Patidar Kananbala Sharma Narendra S Saxena Thansewar P Sharma |
| |
| Institution: | 1. Semi Conductor and Polymer Science Lab, Deptartment of Physics, University of Rajasthan, Jaipur, 302004, India
|
| |
| Abstract: | Pure Polyaniline (EB) and Polyaniline doped with different protonic acids (ESs) were chemically synthesized using ammonium peroxydisulphate (APS) as an oxidant. Junctions have been prepared by evaporating chalcogenide materials (ZnSe, CdSe) on conducting polyaniline (EB & ESs) pellets using a vacuum evaporation technique. I–V characteristics of junctions have been studied at room temperature using the Keithley electrometer 6517A. I–V measurements show the rectification effect. A junction of ESPO4 3?] may be preferred over the other junctions due to its low ideality factor and maximum rectification ratio.  | |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ |
|
