| Abstract: | Silicon layers implanted with boron, lithium, phosphorus, and silicon are investigated by x-ray measurements of the lattice constant. It is established that, as a result of ion implantation in silicon, stable interstitial complexes are generated in concentrations comparable to those of vacancy type defects. The interstitial complexes are annealed in stages, viz., I at 140, II at 500°C in the case of irradiation of silicon with light ions, and I at 180, II at 560°C in crystals irradiated with medium mass ions.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 76–80, July, 1984.The authors are grateful to V. D. Tkachev for useful discussion of the results. |
