Growth temperature dependence of low-noise MESFET in molecular-beam epitaxy |
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| Authors: | Chou YC Lee CT Chen CD Chu KC |
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| Institution: | Chung Shan Institute of Science & Technology, Lung-Tan, Republic of China; |
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| Abstract: | The substrate growth temperature dependence of electrical properties for a low-noise MESFET fabricated on MBE-grown material has been demonstrated. The optimum noise figure and its associated gain were attributed to the higher epilayer quality and mobility at a growth temperature of 650°C between temperatures of 550°C and 700°C. |
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