| 透射式GaAs光电阴极材料的MOCVD生长 |
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| 引用本文： | 高鸿楷,张济康.透射式GaAs光电阴极材料的MOCVD生长[J].光子学报,1992,21(2):133-137. |
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| 作者姓名： | 高鸿楷 张济康 |
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| 作者单位： | 中国科学院西安光学精密机械研究所 710068
(高鸿楷，张济康，云峰，龚平，王海滨)，中国科学院西安光学精密机械研究所 710068(侯洵) |
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| 摘 要： | 用常压MOCVD装置,制备了透射式GaAs光电阴极材料。发射层P-型GaAs掺杂浓度到1018-1019cm-3,少子扩散长度到4.02μm。AlGaAs层的Al组分含量到0.83,其吸收光谱长波限与设计值基本符合。利用此材料进行了阴极激活实验,制成了透射式GaAs光阴极。
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| 关 键 词： | MOCVD GaAs 光电阴极材料 |
| 收稿时间： | 1991-04-19 |
MOCVD GROWTH OF TRANSMISSION MODE NEA GaAs PHOTOCATHODE MATERIAL |
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| Gao Hongkai,Zhang Jikang,Yun Feng,Gong Ping,Wang Haibin and Hou XunXian Institute of Optics and Precision Mechanics Academia Sinica,Xian.MOCVD GROWTH OF TRANSMISSION MODE NEA GaAs PHOTOCATHODE MATERIAL[J].Acta Photonica Sinica,1992,21(2):133-137. |
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| Authors: | Gao Hongkai Zhang Jikang Yun Feng Gong Ping Wang Haibin and Hou XunXian Institute of Optics and Precision Mechanics Academia Sinica Xian |
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| Institution: | Gao Hongkai,Zhang Jikang,Yun Feng,Gong Ping,Wang Haibin and Hou XunXian Institute of Optics and Precision Mechanics Academia Sinica,Xian 710068 |
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| Abstract: | A transmission mode GaAs photocathode material has been grown by an CVD system. The doping concentration and the minority carrier diffusion length of P-GaAs emission layer are 1018 - 1019cm-3 and 4. 02 nm, respectively. The A1 content of AlGaAs is up to 0.83. The long wave limit of its absorption band coincides with design demands essentially. The activation experiments of the material have been carried out and finally the transmission mode NEA GaAs photocathode has been developed. |
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| Keywords: | MOCVD GaAs Photocathode |
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