Stress effect and evidence of ferroelectric weakening in highly c-axis-oriented PbTiO3 thin films |
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Authors: | W Ma M Zhang T Yu Y Chen N Ming |
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Institution: | (1) National Laboratory of Molecular and Biomolecular Electronics, Southeast University, Nanjing 210096, P.R. China (Fax: +86-25/7712-719, E-mail: whma@seu.edu.cn), CN;(2) National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P.R. China, CN |
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Abstract: | 3 were successfully grown on Pt-coated SrTiO3 single-crystal substrates by metalorganic chemical vapor deposition (MOCVD) and were investigated by using X-ray diffraction
(XRD), scanning electron microscopy (SEM) and Raman spectroscopy. The as-deposited thin films were found to be highly (001)-oriented
with an average grain size of about 0.3 μm. Both a decrease of the tetragonality and a frequency downshift of the long-wavelength
optical phonons were observed and attributed to the effect of compressive stress in the thin films. However, Raman scattering
studies estimated a stress value of 2.6 GPa, which is much larger than the value of 0.75 GPa obtained from the XRD analyses.
Raman spectroscopic studies also confirmed the grain-size-related disorder feature in the as-grown PbTiO3 thin films. Structural investigations implied the weakening of ferroelectricity in the heteroepitaxial ferroelectric thin
films.
Received: 1 April 1997/Accepted: 14 July 1997 |
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Keywords: | PACS: 68 55 J 78 30 Hv 77 55 +f |
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