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Stress effect and evidence of ferroelectric weakening in highly c-axis-oriented PbTiO3 thin films
Authors:W Ma  M Zhang  T Yu  Y Chen  N Ming
Institution:(1) National Laboratory of Molecular and Biomolecular Electronics, Southeast University, Nanjing 210096, P.R. China (Fax: +86-25/7712-719, E-mail: whma@seu.edu.cn), CN;(2) National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P.R. China, CN
Abstract:3 were successfully grown on Pt-coated SrTiO3 single-crystal substrates by metalorganic chemical vapor deposition (MOCVD) and were investigated by using X-ray diffraction (XRD), scanning electron microscopy (SEM) and Raman spectroscopy. The as-deposited thin films were found to be highly (001)-oriented with an average grain size of about 0.3 μm. Both a decrease of the tetragonality and a frequency downshift of the long-wavelength optical phonons were observed and attributed to the effect of compressive stress in the thin films. However, Raman scattering studies estimated a stress value of 2.6 GPa, which is much larger than the value of 0.75 GPa obtained from the XRD analyses. Raman spectroscopic studies also confirmed the grain-size-related disorder feature in the as-grown PbTiO3 thin films. Structural investigations implied the weakening of ferroelectricity in the heteroepitaxial ferroelectric thin films. Received: 1 April 1997/Accepted: 14 July 1997
Keywords:PACS: 68  55  J  78  30  Hv  77  55  +f
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