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Low-temperature intracenter relaxation times of shallow donors in germanium |
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| Authors: | R Kh Zhukavin K A Kovalevskii S M Sergeev Yu Yu Choporova V V Gerasimov V V Tsyplenkov B A Knyazev N V Abrosimov S G Pavlov V N Shastin H Schneider N Deßmann O A Shevchenko N A Vinokurov G N Kulipanov H-W Hübers |
| Institution: | 1.Institute for Physics of Microstructures,Russian Academy of Sciences,Nizhny Novgorod,Russia;2.Budker Institute of Nuclear Physics, Siberian Branch,Russian Academy of Sciences,Novosibirsk,Russia;3.National Research Novosibirsk State University,Novosibirsk,Russia;4.Leibniz Institute of Crystal Growth,Berlin,Germany;5.Humboldt-Universit?t zu Berlin,Berlin,Germany;6.DLR Institute of Optical Sensor Systems,Berlin,Germany;7.Helmholtz-Zentrum Dresden-Rossendorf,Dresden,Germany;8.NEST,Istituto Nanoscienze-CNR,Pisa,Italy |
| Abstract: | The relaxation times of localized states of antimony donors in unstrained and strained germanium uniaxially compressed along the 111] crystallographic direction are measured at cryogenic temperatures. The measurements are carried out in a single-wavelength pump–probe setup using radiation from the Novosibirsk free electron laser (NovoFEL). The relaxation times in unstrained crystals depend on the temperature and excitation photon energy. Measurements in strained crystals are carried out under stress bar S > 300, in which case the ground-state wavefunction is formed by states belonging to a single valley in the germanium conduction band. It is shown that the application of uniaxial strain leads to an increase in the relaxation time, which is explained by a decrease in the number of relaxation channels. |
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