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Dynamic compression of exciton-polariton condensates in semiconductor microcavities
Authors:V. D. Kulakovskii  S. S. Gavrilov  N. A. Gippius
Affiliation:1.Rzhanov Institute of Semiconductor Physics, Siberian Branch,Russian Academy of Sciences,Novosibirsk,Russia;2.Novosibirsk State University,Novosibirsk,Russia
Abstract:The evolution of probabilities of escape of hot and thermalized electrons from GaAs(001) with adsorbed cesium and oxygen layers to vacuum at the transition from positive to negative effective electron affinity is studied by the photoemission quantum yield spectroscopy. A minimum of the probability of escape of thermalized electrons near zero electron affinity is revealed and explained.
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