Selective enhancement of the hole photocurrent by surface plasmon–polaritons in layers of Ge/Si quantum dots |
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Authors: | A I Yakimov V V Kirienko V A Armbrister A V Dvurechenskii |
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Institution: | 1.Rzhanov Institute of Semiconductor Physics, Siberian Branch,Russian Academy of Sciences,Novosibirsk,Russia;2.Tomsk State University,Tomsk,Russia;3.Novosibirsk State University,Novosibirsk,Russia |
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Abstract: | It is found that the integration of Ge/Si heterostructures containing layers of Ge quantum dots with twodimensional regular lattices of subwave holes in a gold film on the surface of a semiconductor leads to the multiple (to 20 times) enhancement of the hole photocurrent in narrow wavelength regions of the mid-infrared range. The results are explained by the light wave excitation of the surface plasmon–polaritons at the metal–semiconductor interface effectively interacting with intraband transitions of holes in quantum dots. |
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