Lpe growth method possibilities in A3B5 semiconductors preparation

Pre-diffusion limited technique of liquid phase epitaxy is used for preparation of quaternary solid solution Ga _x In_1−x As _y P_1−y and binary InP. Surface morphology of the layers prepared at this condition has been compared with those prepared by conventional LPE. Quaternary strained layers with composition near to Ga_0.21In_0.79As_0.75P_0.25 were grown with perpendicular lattice mismatch up to 1.6% in compression, on the InP substrates of (100) orientation. The used epitaxial technique has been modified for perspective attempt to heal the growth interfaces. Modification was tested by InP growth. Presented at the 6th Joint Seminar “Development of Materials Science in Research and Education”, Karlštejn, Czech Republic, 17–19 September 1996.