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Optical characterization of SiO2/Zn2SiO4:V nanocomposite obtained after the incorporation of ZnO:V nanoparticles in silica host matrix |
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| Authors: | J El Ghoul M Saadoun |
| Institution: | a Laboratoire de Physique des Matériaux et des Nanomatériaux Appliquée à l'Environnement, Faculté des Sciences de Gabès, Cité Erriadh Manara Zrig 6072 Gabès, Tunisie b Institut des NanoSciences de Paris (INSP), UPMC Université Paris 6, CNRS UMR 7588, 140 rue de Lourmel, F-75015 Paris, France c Laboratoire de Nanomatériaux et des Systèmes pour l'Energie (LaNSE), Technopole de Borj-Cédria BP 95, 2050 Hammam-Lif, Tunisie |
| Abstract: | Vanadium-doped Zn2SiO4 particles embedded in silica host matrix were prepared by a simple solid-phase reaction under natural atmosphere at 1200 °C after the incorporation of ZnO:V nanoparticles in silica monolith using sol-gel method with supercritical drying of ethyl alcohol in two steps. The obtained sample, exhibits a strong PL band in the visible range at 540 nm and two thin emission lines in the UV range at 394 and 396 nm under intensive power excitation. Photoluminescence excitation (PLE) measurements show different origins of the emission bands. It is suggested that radiative defects attributed to vanadium in the interfaces between Zn2SiO4 particles and SiO2 host matrix resulting from heat treatment and zinc oxide excitonic emissions, were responsible for theses luminescence bands. |
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